CIGSS films prepared by sol-gel route
Impacto
Scholar |
Otros documentos de la autoría: De Oliveira, Larissa Helena; Todorov, Teodor Krassimirov; Chassaing, E.; Lincot, D.; Carda Castelló, Juan Bautista; Escribano López, Purificación
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http://dx.doi.org/10.1016/j.tsf.2008.10.104 |
Metadatos
Título
CIGSS films prepared by sol-gel routeAutoría
Fecha de publicación
2009Editor
ElsevierISSN
406090Cita bibliográfica
Thin Solid Films, 517, 7, p. 2272-2276Tipo de documento
info:eu-repo/semantics/articlePalabras clave / Materias
Resumen
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, ... [+]
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. © 2008 Elsevier B.V. All rights reserved. [-]
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info:eu-repo/semantics/restrictedAccess
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