CIGSS films prepared by sol-gel route
Impact
![Google Scholar](/xmlui/themes/Mirage2/images/uji/logo_google.png)
![Microsoft Academico](/xmlui/themes/Mirage2/images/uji/logo_microsoft.png)
Metadata
Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
comunitat-uji-handle4:
INVESTIGACIONThis resource is restricted
http://dx.doi.org/10.1016/j.tsf.2008.10.104 |
Metadata
Title
CIGSS films prepared by sol-gel routeAuthor (s)
Date
2009Publisher
ElsevierISSN
406090Bibliographic citation
Thin Solid Films, 517, 7, p. 2272-2276Type
info:eu-repo/semantics/articleSubject
Abstract
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, ... [+]
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. © 2008 Elsevier B.V. All rights reserved. [-]
Rights
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/restrictedAccess
info:eu-repo/semantics/restrictedAccess
This item appears in the folowing collection(s)
- QUIO_Articles [699]
xmlui.dri2xhtml.METS-1.0.item-elsevier-embed
![PDF](/xmlui/themes/Mirage2/images/uji/elsevier-pdf.png)