CIGSS films prepared by sol-gel route
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
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INVESTIGACIONAquest recurs és restringit
http://dx.doi.org/10.1016/j.tsf.2008.10.104 |
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Títol
CIGSS films prepared by sol-gel routeAutoria
Data de publicació
2009Editor
ElsevierISSN
406090Cita bibliogràfica
Thin Solid Films, 517, 7, p. 2272-2276Tipus de document
info:eu-repo/semantics/articleParaules clau / Matèries
Resum
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, ... [+]
Homogeneous layers of amorphous oxides of Cu-In, Cu-In-Ga were deposited by a sol-gel method. Selenization, sulfurization and sequential selenization + sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized films. Band gap values in the range of 1.18-1.63 eV were obtained. © 2008 Elsevier B.V. All rights reserved. [-]
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info:eu-repo/semantics/restrictedAccess
info:eu-repo/semantics/restrictedAccess
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