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All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure
dc.contributor.author | S. Sánchez, Rafael | |
dc.contributor.author | Binetti, Enrico | |
dc.contributor.author | Torre, J. A. | |
dc.contributor.author | Garcia-Belmonte, Germà | |
dc.contributor.author | Striccoli, Marinella | |
dc.contributor.author | Mora-Sero, Ivan | |
dc.date.accessioned | 2015-09-04T07:58:24Z | |
dc.date.available | 2015-09-04T07:58:24Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | SANCHEZ, Rafael S., et al. All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure. Nanoscale, 2014, vol. 6, no 15, p. 8551-8555. | ca_CA |
dc.identifier.issn | 2040-3364 | |
dc.identifier.uri | http://hdl.handle.net/10234/131257 | |
dc.description.abstract | Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of light emitting devices (LEDs) due to tunable and pure color emission, brightness and solution processability. This last advantage of the QD-LEDs is even more evident in the field of infrared emission where the devices currently used are prepared by high cost epitaxial techniques. Here we show the fabrication of low cost NIR QD-LEDs based on high quantum yield core–shell PbS–CdS QDs and a novel inverted device structure. Devices are produced using SnO2:F (FTO) as the conductive transparent contact, nanostructured TiO2 as the electron transport layer (ETL) and poly(3-hexylthiophene) P3HT as the hole transport layer (HTL). Despite the roughness of this ETL, the obtained external quantum efficiencies (EQEs) are similar to previously reported values, obtained with regular configuration and more expensive ITO substrates. A turn-on voltage as low as the QD band gap (1.47 eV) is achieved for a large area (1.54 cm2) and relatively stable QD-LEDs. | ca_CA |
dc.description.sponsorShip | This work was partially supported by Generalitat Valenciana (ISIC/2012/008), and FP7 European project ORION (Large CP-IP 229036-2), and Universitat Jaume I project 12I361.01/1. We thank SCIC from Universitat Jaume I for the help with SEM measurements, and R. Comparelli from CNR IPCF for TEM measurements. The financial support from the Research Project PON R&C 2007-2013 MAAT "Molecular Nanotechnology for Health and Environment" (PON 02_00563_3316357) is gratefully acknowledged. | ca_CA |
dc.format.extent | 5 p. | ca_CA |
dc.format.mimetype | application/pdf | ca_CA |
dc.language.iso | eng | ca_CA |
dc.publisher | Royal Society of Chemistry | ca_CA |
dc.relation.isPartOf | Nanoscale, 2014, vol. 6, no 15 | ca_CA |
dc.rights | © The Royal Society of Chemistry 2014 | ca_CA |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | * |
dc.subject | cadmium sulfide | ca_CA |
dc.subject | infrared devices | ca_CA |
dc.subject | semiconductor quantum dots | ca_CA |
dc.title | All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure | ca_CA |
dc.type | info:eu-repo/semantics/article | ca_CA |
dc.identifier.doi | http://dx.doi.org/10.1039/C4NR01975J | |
dc.rights.accessRights | info:eu-repo/semantics/restrictedAccess | ca_CA |
dc.relation.publisherVersion | http://pubs.rsc.org/en/Content/ArticleLanding/2014/NR/C4NR01975J#!divAbstract | ca_CA |
dc.type.version | info:eu-repo/semantics/publishedVersion |
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