All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure
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Otros documentos de la autoría: S. Sánchez, Rafael; Binetti, Enrico; Torre, J. A.; Garcia-Belmonte, Germà; Striccoli, Marinella; Mora-Sero, Ivan
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http://dx.doi.org/10.1039/C4NR01975J |
Metadatos
Título
All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structureAutoría
Fecha de publicación
2014Editor
Royal Society of ChemistryISSN
2040-3364Cita bibliográfica
SANCHEZ, Rafael S., et al. All solution processed low turn-on voltage near infrared LEDs based on core–shell PbS–CdS quantum dots with inverted device structure. Nanoscale, 2014, vol. 6, no 15, p. 8551-8555.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.rsc.org/en/Content/ArticleLanding/2014/NR/C4NR01975J#!divAbstractVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of light emitting devices (LEDs) due to tunable and pure color emission, brightness and solution processability. This last ... [+]
Colloidal semiconductor quantum dots (QDs) are extraordinarily appealing for the development of light emitting devices (LEDs) due to tunable and pure color emission, brightness and solution processability. This last advantage of the QD-LEDs is even more evident in the field of infrared emission where the devices currently used are prepared by high cost epitaxial techniques. Here we show the fabrication of low cost NIR QD-LEDs based on high quantum yield core–shell PbS–CdS QDs and a novel inverted device structure. Devices are produced using SnO2:F (FTO) as the conductive transparent contact, nanostructured TiO2 as the electron transport layer (ETL) and poly(3-hexylthiophene) P3HT as the hole transport layer (HTL). Despite the roughness of this ETL, the obtained external quantum efficiencies (EQEs) are similar to previously reported values, obtained with regular configuration and more expensive ITO substrates. A turn-on voltage as low as the QD band gap (1.47 eV) is achieved for a large area (1.54 cm2) and relatively stable QD-LEDs. [-]
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Nanoscale, 2014, vol. 6, no 15Derechos de acceso
© The Royal Society of Chemistry 2014
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