Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
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Otros documentos de la autoría: Tomasello, Riccardo; Sánchez-Tejerina San José, Luis; Lopez-Dominguez, Victor; Garescì, Francesca; Giordano, Anna; Carpentieri, Mario; Khalili Amiri, Pedram; Finocchio, Giovanni
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadatos
Título
Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interactionAutoría
Fecha de publicación
2020-12-28Editor
American Physical SocietyISSN
2469-9950; 2469-9969Cita bibliográfica
Tomasello, R., Sanchez-Tejerina, L., Lopez-Dominguez, V., Garescì, F., Giordano, A., Carpentieri, M., Khalili Amiri, P. & Finocchio, G. (2020). Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction. Physical Review B, 102(22), 224432.Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical ... [+]
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for applications. Here, we present a study focusing on the fundamental properties of antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results have implication in the design of multiterminal heavy-metal/antiferromagnet memory devices. [-]
Publicado en
Physical Review B Vol. 102, Iss. 22 (december 2020)Entidad financiadora
Hellenic Foundation for Research and Innovation | General Secretariat for Research and Technology | U.S. National Science Foundation, Division of Electrical, Communications and Cyber Systems
Código del proyecto o subvención
Grant No. 871 | NSF ECCS-1853879
Título del proyecto o subvención
ThunderSKY
Derechos de acceso
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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