Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
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Altres documents de l'autoria: Tomasello, Riccardo; Sánchez-Tejerina San José, Luis; Lopez-Dominguez, Victor; Garescì, Francesca; Giordano, Anna; Carpentieri, Mario; Khalili Amiri, Pedram; Finocchio, Giovanni
Metadades
Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadades
Títol
Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interactionAutoria
Data de publicació
2020-12-28Editor
American Physical SocietyISSN
2469-9950; 2469-9969Cita bibliogràfica
Tomasello, R., Sanchez-Tejerina, L., Lopez-Dominguez, V., Garescì, F., Giordano, A., Carpentieri, M., Khalili Amiri, P. & Finocchio, G. (2020). Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction. Physical Review B, 102(22), 224432.Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical ... [+]
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for applications. Here, we present a study focusing on the fundamental properties of antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results have implication in the design of multiterminal heavy-metal/antiferromagnet memory devices. [-]
Publicat a
Physical Review B Vol. 102, Iss. 22 (december 2020)Entitat finançadora
Hellenic Foundation for Research and Innovation | General Secretariat for Research and Technology | U.S. National Science Foundation, Division of Electrical, Communications and Cyber Systems
Codi del projecte o subvenció
Grant No. 871 | NSF ECCS-1853879
Títol del projecte o subvenció
ThunderSKY
Drets d'accés
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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