Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction
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Other documents of the author: Tomasello, Riccardo; Sánchez-Tejerina San José, Luis; Lopez-Dominguez, Victor; Garescì, Francesca; Giordano, Anna; Carpentieri, Mario; Khalili Amiri, Pedram; Finocchio, Giovanni
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comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Title
Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interactionAuthor (s)
Date
2020-12-28Publisher
American Physical SocietyISSN
2469-9950; 2469-9969Bibliographic citation
Tomasello, R., Sanchez-Tejerina, L., Lopez-Dominguez, V., Garescì, F., Giordano, A., Carpentieri, M., Khalili Amiri, P. & Finocchio, G. (2020). Domain periodicity in an easy-plane antiferromagnet with Dzyaloshinskii-Moriya interaction. Physical Review B, 102(22), 224432.Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/acceptedVersionSubject
Abstract
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical ... [+]
Antiferromagnetic spintronics is a promising emerging paradigm to develop high-performance computing and communications devices. Antiferromagnetic materials are more abundant than ferromagnets; hence, from a theoretical point of view, it is important to implement simulation tools that can support a data-driven development of materials having specific properties for applications. Here, we present a study focusing on the fundamental properties of antiferromagnetic materials having an easy-plane anisotropy and interfacial Dzyaloshinskii-Moriya interaction (IDMI). An analytical theory is developed and benchmarked against full numerical micromagnetic simulations, describing the main properties of the ground state in antiferromagnets and how it is possible to estimate the IDMI from experimental measurements. The effect of the IDMI on the electrical switching dynamics of the antiferromagnetic element is also analyzed. Our theoretical results have implication in the design of multiterminal heavy-metal/antiferromagnet memory devices. [-]
Is part of
Physical Review B Vol. 102, Iss. 22 (december 2020)Funder Name
Hellenic Foundation for Research and Innovation | General Secretariat for Research and Technology | U.S. National Science Foundation, Division of Electrical, Communications and Cyber Systems
Project code
Grant No. 871 | NSF ECCS-1853879
Project title or grant
ThunderSKY
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info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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