Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories
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Other documents of the author: Solanki, Ankur; Guerrero, Antonio; Zhang, Qiannan; Bisquert, Juan; Sum, T. C.
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comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Title
Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile MemoriesDate
2020-01-16Publisher
American Chemical SocietyISSN
1948-7185Bibliographic citation
SOLANKI, Ankur, et al. Interfacial mechanism for efficient resistive switching in ruddlesden–popper perovskites for non-volatile memories. The Journal of Physical Chemistry Letters, 2019, vol. 11, no 2, p. 463-470.Type
info:eu-repo/semantics/articlePublisher version
https://pubs.acs.org/doi/10.1021/acs.jpclett.9b03181Version
info:eu-repo/semantics/acceptedVersionSubject
Abstract
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered ... [+]
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen–Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications. [-]
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J. Phys. Chem. Lett. 2020, 11, 2, 463–470Investigation project
M4080514 ; JSPS-NTU ; M4082176 ; RG173/16 ; MOE2015-T2-2-015 ; MOE2016-T2-1-034 ; MOE2017-T2-1-110 ; NRF-NRFI-2018-04 ; MAT2016-76892-C3-1-R. A.G. ; (RYC- ́ 201416809 ; UJI-B2017-32Rights
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