Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories
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Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile MemoriesData de publicació
2020-01-16Editor
American Chemical SocietyISSN
1948-7185Cita bibliogràfica
SOLANKI, Ankur, et al. Interfacial mechanism for efficient resistive switching in ruddlesden–popper perovskites for non-volatile memories. The Journal of Physical Chemistry Letters, 2019, vol. 11, no 2, p. 463-470.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://pubs.acs.org/doi/10.1021/acs.jpclett.9b03181Versió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered ... [+]
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen–Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications. [-]
Publicat a
J. Phys. Chem. Lett. 2020, 11, 2, 463–470Proyecto de investigación
M4080514 ; JSPS-NTU ; M4082176 ; RG173/16 ; MOE2015-T2-2-015 ; MOE2016-T2-1-034 ; MOE2017-T2-1-110 ; NRF-NRFI-2018-04 ; MAT2016-76892-C3-1-R. A.G. ; (RYC- ́ 201416809 ; UJI-B2017-32Drets d'accés
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