Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile Memories
Ver/ Abrir
Impacto
Scholar |
Otros documentos de la autoría: Solanki, Ankur; Guerrero, Antonio; Zhang, Qiannan; Bisquert, Juan; Sum, T. C.
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
comunitat-uji-handle4:
INVESTIGACIONMetadatos
Título
Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden-Popper Perovskites for Non-volatile MemoriesFecha de publicación
2020-01-16Editor
American Chemical SocietyISSN
1948-7185Cita bibliográfica
SOLANKI, Ankur, et al. Interfacial mechanism for efficient resistive switching in ruddlesden–popper perovskites for non-volatile memories. The Journal of Physical Chemistry Letters, 2019, vol. 11, no 2, p. 463-470.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/10.1021/acs.jpclett.9b03181Versión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered ... [+]
Ion migration, one origin of current–voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen–Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at n̅ = 5, demonstrating the highest ON/OFF ratio of ∼104 and minimal operation voltage in 1.0 mm2 devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications. [-]
Publicado en
J. Phys. Chem. Lett. 2020, 11, 2, 463–470Proyecto de investigación
M4080514 ; JSPS-NTU ; M4082176 ; RG173/16 ; MOE2015-T2-2-015 ; MOE2016-T2-1-034 ; MOE2017-T2-1-110 ; NRF-NRFI-2018-04 ; MAT2016-76892-C3-1-R. A.G. ; (RYC- ́ 201416809 ; UJI-B2017-32Derechos de acceso
Copyright © 2019 American Chemical Society
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
Aparece en las colecciones
- INAM_Articles [528]
- FCA_Articles [511]