Listar FCA_Articles por autoría "6e5c7c8b-3f60-42fd-8af7-8c9f3252f2f6"

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    • openAccess   Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties 

      Afalla, Jessica; Prieto, Elizabeth Ann; Husay, Horace Andrew; Gonzales, Cedric; Catindig, Gerald; Abulikemu, Aizitiaili; Somintac, Armando; Salvador, Arnel; Estacio, Elmer; Tan, Masahiko; Hase, Muneaki IOP Publishing (2021-06-16)
      Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial ...

    • openAccess   Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system 

      Gonzales, Cedric; Prieto, Elizabeth Ann; Catindig, Gerald Angelo; Reyes Moreno, Alexander; Faustino, Maria Angela; Tumanguil-Quitoras, Mae Agatha; Husay, Horace Andrew; Vasquez, John Daniel; Somintac, Armando; Estacio, Elmer; Salvador, Arnel American Statistical Association (2021-04-22)
      Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures ...