Bright visible-infrared light emitting diodes based on hybrid halide perovskite with Spiro-OMeTAD as a hole-injecting layer
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Altres documents de l'autoria: Jaramillo Quintero, Óscar A.; S. Sánchez, Rafael; Rincón, Marina; Mora-Sero, Ivan
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http://dx.doi.org/10.1021/acs.jpclett.5b00732 |
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Bright visible-infrared light emitting diodes based on hybrid halide perovskite with Spiro-OMeTAD as a hole-injecting layerData de publicació
2015-05Editor
American Chemical SocietyCita bibliogràfica
JARAMILLO-QUINTERO, Oscar A., et al. Bright visible-infrared light emitting diodes based on hybrid halide perovskite with Spiro-OMeTAD as a hole-injecting layer. The journal of physical chemistry letters, 2015, vol. 6, no 10, p. 1883-1890.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.5b00732Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
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Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light ... [+]
Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI3-xClx and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr–1·m–2 at a current density of 232 mA·cm–2, and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (Vturn-on = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself. [-]
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J. Phys. Chem. Lett., 2015, 6 (10)Drets d'accés
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