Beyond the quasistatic approximation: Impedance and capacitance of an exponential distribution of traps
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadatos
Título
Beyond the quasistatic approximation: Impedance and capacitance of an exponential distribution of trapsAutoría
Fecha de publicación
2008Editor
American Physical SocietyISSN
10980121Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Electronic carriers in disordered organic and inorganic semiconductor materials, used in electronic, optoelectronic,
and photovoltaic devices, are usually affected by an exponential distribution of localized states ... [+]
Electronic carriers in disordered organic and inorganic semiconductor materials, used in electronic, optoelectronic,
and photovoltaic devices, are usually affected by an exponential distribution of localized states in
the band gap traps . In this paper we provide a full solution of the relaxation of carriers in traps of such
distribution, as a function of frequency and steady-state Fermi level. This includes in a unified treatment both
the quasistatic limit, in which the traps modify time constants such as the trap-limited mobility, and the
power-law relaxation at high frequency due to detrapping kinetics. We also analyze the combination of trapping
with diffusion transport and recombination dynamics in photovoltaic devices. The different features of
impedance and capacitance spectra are interpreted and also the analysis of the spectra in order to derive the
main material parameters [-]
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info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
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