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Perimeter leakage current in polymer light emitting diodes

dc.contributor.authorGarcia-Belmonte, Germà
dc.contributor.authorMontero Martín, José María
dc.contributor.authorAyyad Limonge Yassid
dc.contributor.authorBarea, Eva M
dc.contributor.authorBisquert, Juan
dc.contributor.authorBolink, Henk J.
dc.date.accessioned2012-08-07T09:55:54Z
dc.date.available2012-08-07T09:55:54Z
dc.date.issued2009
dc.identifierhttp://dx.doi.org/10.1016/j.cap.2008.03.018
dc.identifier.citationCurrent Applied Physics, 9, 2, p. 414-416
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/10234/43713
dc.description.abstractObservation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). © 2008 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.publisherElsevier
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectEdge shunt
dc.subjectLeakage currents
dc.subjectLight emitting diodes
dc.titlePerimeter leakage current in polymer light emitting diodes
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doihttp://dx.doi.org/10.1016/j.cap.2008.03.018
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccess
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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