Perimeter leakage current in polymer light emitting diodes
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Other documents of the author: Garcia-Belmonte, Germà; Montero Martín, José María; Ayyad Limonge Yassid; Barea, Eva M; Bisquert, Juan; Bolink, Henk J.
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1016/j.cap.2008.03.018 |
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Title
Perimeter leakage current in polymer light emitting diodesAuthor (s)
Date
2009Publisher
ElsevierISSN
1567-1739Bibliographic citation
Current Applied Physics, 9, 2, p. 414-416Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/publishedVersionSubject
Abstract
Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and ... [+]
Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). © 2008 Elsevier B.V. All rights reserved. [-]
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