Triplication of the photocurrent in dye solar cells by increasing the elongation of the π-conjugation in Zn-porphyrin sensitizers
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Altres documents de l'autoria: Barea, Eva M; Caballero, Rubén; López Arroyo, Leticia; De la Cruz, Pilar; Langa, Fernando; Bisquert, Juan; Guerrero, Antonio
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadades
Títol
Triplication of the photocurrent in dye solar cells by increasing the elongation of the π-conjugation in Zn-porphyrin sensitizersAutoria
Data de publicació
2011Editor
Wiley-VCH Verlag BerlinISSN
1439-4235; 1439-7641Cita bibliogràfica
ChemPhysChem (2011) vol. 12, no. 5, pp. 961-965Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
Porphyrins are promising sensitizers for dye solar cells (DSCs) but narrow absorption bands at 400-450 and 500-650 nm limit their light-harvesting properties. Increasing elongation of the π-conjugation and loss of ... [+]
Porphyrins are promising sensitizers for dye solar cells (DSCs) but narrow absorption bands at 400-450 and 500-650 nm limit their light-harvesting properties. Increasing elongation of the π-conjugation and loss of symmetry causes broadening and a red-shift of the absorption bands, which considerably improves the performance of the DSC. Herein we use an oligothienylenevinylene to bridge a Zn-porphyrin system and the anchoring group of the sensitizer. We separately study the performance of the two basic units: oligothienylenevinylene and Zn-porphyrin. The combined system provides a three-fold enhancement of the photocurrent with respect to parent dyes. This is caused by an additional strong absorption in the region 400-650 nm that leads to flat IPCE of 60%. Theoretical calculations support that the addition of the oligothienylenevinylene unit as a linking bridge creates a charge transfer band that transforms a Zn-porphyrin dye into a push-pull type system with highly efficient charge injection properties [-]
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