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dc.contributor.authorMacor, Lorena
dc.contributor.authorFungo, Fernando
dc.contributor.authorTempesti, Tomas
dc.contributor.authorDurantini, Edgardo N.
dc.contributor.authorOtero, Luis
dc.contributor.authorBarea, Eva M
dc.contributor.authorFabregat-Santiago, Francisco
dc.contributor.authorBisquert, Juan
dc.date.accessioned2011-05-27T06:50:46Z
dc.date.available2011-05-27T06:50:46Z
dc.date.issued2009
dc.identifier.citationMACOR, Lorena, et al. Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Sinaphthalocyanines. Energy & Environmental Science, 2009, vol. 2, no 5, p. 529-534.
dc.identifier.issn1754-5692
dc.identifier.urihttp://hdl.handle.net/10234/22690
dc.description.abstractNear-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at λ 790 nm
dc.format.extent6 p.
dc.language.isoeng
dc.publisherRoyal Society of Chemistry
dc.relation.isPartOfEnergy and Environmental Science, 2009, v. 2, n. 5
dc.rights© Royal Society of Chemistry
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subjectNear-IR
dc.subjectSi-naphthalocyanine
dc.subjectSolar cells
dc.titleNear-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines
dc.typeinfo:eu-repo/semantics/article
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.type.versioninfo:eu-repo/semantics/publishedVersion


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