Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyanines
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Altres documents de l'autoria: Macor, Lorena; Fungo, Fernando; Tempesti, Tomas; Durantini, Edgardo N.; Otero, Luis; Barea, Eva M; Fabregat-Santiago, Francisco; Bisquert, Juan
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadades
Títol
Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Si-naphthalocyaninesAutoria
Data de publicació
2009Editor
Royal Society of ChemistryISSN
1754-5692Cita bibliogràfica
MACOR, Lorena, et al. Near-IR sensitization of wide band gap oxide semiconductor by axially anchored Sinaphthalocyanines. Energy & Environmental Science, 2009, vol. 2, no 5, p. 529-534.Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored ... [+]
Near-IR dye sensitized solar cells are very interesting due to their potential applications in panchromatic cells, semi-transparent windows and in tandem cells. In this work we show the utilization of axially anchored Si-naphthalocyanine dye in the spectral sensitization of TiO2 nanostructured photoelectrodes. We report the first successful evaluation of a naphthalocyanine in the production of sensitized photocurrent with maximum incident photon to current efficiency (IPCE) at λ 790 nm [-]
Publicat a
Energy and Environmental Science, 2009, v. 2, n. 5Drets d'accés
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