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Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance
dc.contributor.author | Shi, Jiacheng | |
dc.contributor.author | Arpaci, Sevdenur | |
dc.contributor.author | Lopez-Dominguez, Victor | |
dc.contributor.author | Sangwan, Vinod K. | |
dc.contributor.author | Mahfouzi, Farzad | |
dc.contributor.author | Kim, Jinwoong | |
dc.contributor.author | Athas, Jordan G. | |
dc.contributor.author | Hamdi, Mohammad | |
dc.contributor.author | Aygen, Can | |
dc.contributor.author | Arava, Hanu | |
dc.contributor.author | Phatak, Charudatta | |
dc.contributor.author | Carpentieri, Mario | |
dc.contributor.author | Jiang, Jidong S. | |
dc.contributor.author | Grayson, Matthew A. | |
dc.contributor.author | Kioussis, Nicholas | |
dc.contributor.author | Finocchio, Giovanni | |
dc.contributor.author | Hersam, Mark C. | |
dc.contributor.author | Khalili Amiri, Pedram | |
dc.date.accessioned | 2024-07-26T09:24:02Z | |
dc.date.available | 2024-07-26T09:24:02Z | |
dc.date.issued | 2024-06-13 | |
dc.identifier.citation | J. Shi, S. Arpaci, V. Lopez-Dominguez, V. K. Sangwan, F. Mahfouzi, J. Kim, J. G. Athas, M. Hamdi, C. Aygen, H. Arava, C. Phatak, M. Carpentieri, J. S. Jiang, M. A. Grayson, N. Kioussis, G. Finocchio, M. C. Hersam, P. Khalili Amiri, Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance. Adv. Mater. 2024, 36, 2312008. https://doi.org/10.1002/adma.202312008 | ca_CA |
dc.identifier.issn | 0935-9648 | |
dc.identifier.issn | 1521-4095 | |
dc.identifier.uri | http://hdl.handle.net/10234/208359 | |
dc.description.abstract | Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. | ca_CA |
dc.format.extent | 9 p. | ca_CA |
dc.format.mimetype | application/pdf | ca_CA |
dc.language.iso | eng | ca_CA |
dc.publisher | Wiley | ca_CA |
dc.relation.isPartOf | Advanced Materials, 2024, vol. 36, no 24 | ca_CA |
dc.rights | © 2024 The Authors. Advanced Materials published by Wiley-VCHGmbH. This is an open access article under the terms of the CreativeCommons Attribution-NonCommercial License, which permits use,distribution and reproduction in any medium, provided the original workis properly cited and is not used for commercial purposes. | ca_CA |
dc.rights.uri | http://creativecommons.org/licenses/by-nc/4.0/ | ca_CA |
dc.subject | antiferromagnets | ca_CA |
dc.subject | magnetic random-access memory | ca_CA |
dc.subject | magnetic tunnel junctions | ca_CA |
dc.subject | spin-orbit torques | ca_CA |
dc.subject | tunneling magnetoresistance | ca_CA |
dc.title | Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance | ca_CA |
dc.type | info:eu-repo/semantics/article | ca_CA |
dc.identifier.doi | https://doi.org/10.1002/adma.202312008 | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca_CA |
dc.relation.publisherVersion | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202312008 | ca_CA |
dc.description.sponsorship | This work was supported by the National Science Foundation, Division of Electrical, Communications and Cyber Systems (Nos. ECCS-2203243, ECCS-1853879, and ECCS-1912694). This work was also supported by the National Science Foundation Materials Research Science and Engineering Center at Northwestern University (No. NSF DMR-1720139) and made use of its Shared Facilities at the Northwestern University Materials Research Center. This work was also supported by a research contract from Anglo American. One of the magnetic probe stations used in this research was supported by an Office of Naval Research DURIP Grant (No. ONR N00014-19-1-2297). This work utilized the Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is partially supported by the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (No. NSF ECCS-1542205), the Materials Research Science and Engineering Center, Northwestern University (No. NSF DMR-1720139), the State of Illinois, and Northwestern University. This work also made use of the Jerome B. Cohen X-Ray Diffraction Facility supported by the NSF MRSEC program (No. DMR-1720139) at the Materials Research Center of Northwestern University, and the SHyNE Resource (No. NSF ECCS-1542205) at Northwestern University. For part of the sample fabrication, use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The work at Argonne (H.A., C.P., J.S.J.) was funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division. The work at CSUN was supported by NSF PFI-RP Grant No. 1919109, by NSF ERC-Translational Applications of Nanoscale Multiferroic Systems (TANMS) Grant No. 1160504, and by NSF-Partnership in Research and Education in Materials (PREM) Grant No. DMR-1828019. G.F. acknowledged the support from the project “SWAN-on-chip” code 101070287, funded by the European Union within the call HORIZON-CL4-2021-DIGITAL-EMERGING-01. The work of G.F. and M.C. has been also supported by the project PRIN 2020LWPKH7, funded by MUR (Ministero dell'Università e della Ricerca) within the PRIN 2020 call, and the Petaspin association (www.petaspin.com). V.L.-D. acknowledged the support from the Generalitat Valencia through the CIDEGENT Grant No. CIDEXG/2022/26. | |
dc.type.version | info:eu-repo/semantics/publishedVersion | ca_CA |
project.funder.name | National Science Foundation (NSF) | ca_CA |
project.funder.name | National Science Foundation Materials Research Science and Engineering Center at Northwestern University | ca_CA |
project.funder.name | Office of Naval Research | ca_CA |
project.funder.name | Northwestern University | ca_CA |
project.funder.name | United States Department of Energy (DOE) | ca_CA |
project.funder.name | NSF PFI-RP | ca_CA |
project.funder.name | European Union | ca_CA |
project.funder.name | Generalitat Valenciana | ca_CA |
oaire.awardNumber | ECCS-2203243 | ca_CA |
oaire.awardNumber | ECCS-1853879 | ca_CA |
oaire.awardNumber | ECCS-1912694 | ca_CA |
oaire.awardNumber | NSF DMR-1720139 | ca_CA |
oaire.awardNumber | ONR N00014‐19‐1‐2297 | ca_CA |
oaire.awardNumber | NSF ECCS-1542205 | ca_CA |
oaire.awardNumber | NSF DMR-1720139 | ca_CA |
oaire.awardNumber | NSF ECCS-1542205 | ca_CA |
oaire.awardNumber | DE-AC02-06CH11357 | ca_CA |
oaire.awardNumber | 1919109 | ca_CA |
oaire.awardNumber | 1160504 | ca_CA |
oaire.awardNumber | DMR-1828019 | ca_CA |
oaire.awardNumber | info:eu-repo/grantAgreement/EC/HE/101070287 | ca_CA |
oaire.awardNumber | CIDEXG/2022/26 | ca_CA |
dc.subject.ods | 7. Energia asequible y no contaminante | ca_CA |
dc.subject.ods | 9. Industria, innovacion e infraestructura | ca_CA |
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