Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

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comunitat-uji-handle:10234/9

comunitat-uji-handle2:10234/160292

comunitat-uji-handle3:10234/160293

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Metadata

Title
Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance
Author (s)
 Shi, Jiacheng;
 Arpaci, Sevdenur;
 Lopez-Dominguez, VictorOrcidScopus;
 Sangwan, Vinod K.;
 Mahfouzi, Farzad;
 Kim, Jinwoong;
 Athas, Jordan G.;
 Hamdi, Mohammad;
 Aygen, Can;
 Arava, Hanu;
 Phatak, Charudatta;
 Carpentieri, Mario;
 Jiang, Jidong S.;
 Grayson, Matthew A.;
 Kioussis, Nicholas;
 Finocchio, GiovanniOrcidScopus;
 Hersam, Mark C.;
 Khalili Amiri, PedramOrcidScopusResearcherID
Date
2024-06-13
Publisher
Wiley
URI
http://hdl.handle.net/10234/208359
DOI
https://doi.org/10.1002/adma.202312008
ISSN
0935-9648; 1521-4095
Bibliographic citation
J. Shi, S. Arpaci, V. Lopez-Dominguez, V. K. Sangwan, F. Mahfouzi, J. Kim, J. G. Athas, M. Hamdi, C. Aygen, H. Arava, C. Phatak, M. Carpentieri, J. S. Jiang, M. A. Grayson, N. Kioussis, G. Finocchio, M. C. Hersam, P. Khalili Amiri, Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance. Adv. Mater. 2024, 36, 2312008. https://doi.org/10.1002/adma.202312008
Type
info:eu-repo/semantics/article
Publisher version
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202312008
Version
info:eu-repo/semantics/publishedVersion
Subject
Abstract
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous ... [+]
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. [-]
Is part of
Advanced Materials, 2024, vol. 36, no 24
Funder Name
National Science Foundation (NSF) | National Science Foundation Materials Research Science and Engineering Center at Northwestern University | Office of Naval Research | Northwestern University | United States Department of Energy (DOE) | NSF PFI-RP | European Union | Generalitat Valenciana
Project code
ECCS-2203243 | ECCS-1853879 | ECCS-1912694 | NSF DMR-1720139 | ONR N00014‐19‐1‐2297 | NSF ECCS-1542205 | NSF DMR-1720139 | NSF ECCS-1542205 | DE-AC02-06CH11357 | 1919109 | 1160504 | DMR-1828019 | info:eu-repo/grantAgreement/EC/HE/101070287 | CIDEXG/2022/26
Rights
info:eu-repo/semantics/openAccess
This item appears in the folowing collection(s)
© 2024 The Authors. Advanced Materials published by Wiley-VCHGmbH. This is an open access article under the terms of the CreativeCommons Attribution-NonCommercial License, which permits use,distribution and reproduction in any medium, provided the original workis properly cited and is not used for commercial purposes.
Except where otherwise noted, this item's license is described as © 2024 The Authors. Advanced Materials published by Wiley-VCHGmbH. This is an open access article under the terms of the CreativeCommons Attribution-NonCommercial License, which permits use,distribution and reproduction in any medium, provided the original workis properly cited and is not used for commercial purposes.