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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
dc.contributor.author | Rezay Marand, Zahra | |
dc.contributor.author | Kermanpur, Ahmad | |
dc.contributor.author | Karimzadeh, Fathallah | |
dc.contributor.author | Barea, Eva M | |
dc.contributor.author | Hassanabadi, Ehsan | |
dc.contributor.author | Halvani Anaraki, Elham | |
dc.contributor.author | Julian-Lopez, Beatriz | |
dc.contributor.author | Masi, Sofia | |
dc.contributor.author | Mora-Sero, Ivan | |
dc.date.accessioned | 2020-05-14T16:03:40Z | |
dc.date.available | 2020-05-14T16:03:40Z | |
dc.date.issued | 2020-04-30 | |
dc.identifier.citation | Marand, Z.R.; Kermanpur, A.; Karimzadeh, F.; Barea, E.M.; Hassanabadi, E.; Anaraki, E.H.; Julián-López, B.; Masi, S.; Mora-Seró, I. Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells. Nanomaterials 2020, 10, 872. | ca_CA |
dc.identifier.issn | 2079-4991 | |
dc.identifier.uri | http://hdl.handle.net/10234/187992 | |
dc.description.abstract | Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion efficiency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx film, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial effects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two different points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance. | ca_CA |
dc.format.extent | 13 p. | ca_CA |
dc.format.mimetype | application/pdf | ca_CA |
dc.language.iso | eng | ca_CA |
dc.publisher | MDPI | ca_CA |
dc.relation.isPartOf | Nanomaterials 2020, 10, 872 | ca_CA |
dc.rights | © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | ca_CA |
dc.rights | Atribución 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-sa/4.0/ | * |
dc.subject | inverted planar perovskite solar cell | ca_CA |
dc.subject | hole transport material | ca_CA |
dc.subject | Co-doped NiOx | ca_CA |
dc.subject | perovskite morphology | ca_CA |
dc.subject | electrical conductivity | ca_CA |
dc.title | Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells | ca_CA |
dc.type | info:eu-repo/semantics/article | ca_CA |
dc.identifier.doi | http://dx.doi.org/10.3390/nano10050872 | |
dc.relation.projectID | Consolidator Grant (724424-No-LIMIT), DEPE2D UJI-B2019-09, Prometeo Grant Q-Devices (Prometeo/2018/ 098) | ca_CA |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca_CA |
dc.relation.publisherVersion | https://www.mdpi.com/2079-4991/10/5/872 | ca_CA |
dc.type.version | info:eu-repo/semantics/publishedVersion | ca_CA |
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