Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
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Other documents of the author: Rezay Marand, Zahra; Kermanpur, Ahmad; Karimzadeh, Fathallah; Barea, Eva M; Hassanabadi, Ehsan; Halvani Anaraki, Elham; Julian-Lopez, Beatriz; Masi, Sofia; Mora-Sero, Ivan
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comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
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INVESTIGACIONMetadata
Title
Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar CellsAuthor (s)
Date
2020-04-30Publisher
MDPIISSN
2079-4991Bibliographic citation
Marand, Z.R.; Kermanpur, A.; Karimzadeh, F.; Barea, E.M.; Hassanabadi, E.; Anaraki, E.H.; Julián-López, B.; Masi, S.; Mora-Seró, I. Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells. Nanomaterials 2020, 10, 872.Type
info:eu-repo/semantics/articlePublisher version
https://www.mdpi.com/2079-4991/10/5/872Version
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Abstract
Inorganic hole-transporting materials (HTMs) for stable and cheap inverted
perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature,
has been employed. However, the low ... [+]
Inorganic hole-transporting materials (HTMs) for stable and cheap inverted
perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature,
has been employed. However, the low conductivity and the large number of defects limit the boost
of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have
synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions
to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the
low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion efficiency
of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not
from an increase of the conductivity of the NiOx film, but due to the improvement of the perovskite
layer morphology. We observe that the Co-doping raises the interfacial recombination of the device
but more importantly improves the perovskite morphology, enlarging grain size and reducing the
density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial
effects do not just compensate for the deleterious one but increase performance further. Therefore,
0.75 mol% Co doping results in a significant improvement in the performance of NiOx-based inverted
planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the
inorganic material at low temperature, without losing the performance, due to the strong impact
on the structural properties of the perovskite. This work highlights the importance of the interface
from two different points of view, electrical and structural, recognizing the role of a low doping Co
concentration, as a key to improve the inverted perovskite-based solar cells’ performance. [-]
Is part of
Nanomaterials 2020, 10, 872Investigation project
Consolidator Grant (724424-No-LIMIT), DEPE2D UJI-B2019-09, Prometeo Grant Q-Devices (Prometeo/2018/ 098)Rights
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