Strong configuration mixing due to dielectric confinement in semiconductor nanorods
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Otros documentos de la autoría: Climente, Juan I.; Royo Valls, Miguel; Movilla, Jose L.; Planelles, Josep
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Strong configuration mixing due to dielectric confinement in semiconductor nanorodsFecha de publicación
2009Editor
American Physical SocietyISSN
1098-0121Cita bibliográfica
CLIMENTE, Juan I., et al. Strong configuration mixing due to dielectric confinement in semiconductor nanorods. Physical Review B, 2009, vol. 79, no 16, p. 161301.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://link.aps.org/doi/10.1103/PhysRevB.79.161301Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
The interaction between electron-electron and electron-hole pairs in semiconductor nanorods embedded in dielectric media is investigated using a configuration-interaction method. Contrary to spherical quantum dots of ... [+]
The interaction between electron-electron and electron-hole pairs in semiconductor nanorods embedded in dielectric media is investigated using a configuration-interaction method. Contrary to spherical quantum dots of similar volume, the dielectric confinement is shown to bring nanorods into a regime of strong configuration mixing. The wave functions are particularly sensitive to such mixing, which leads to qualitative changes in the electronic and optical properties of the rods [-]
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Physical Review, Series B, 2009, vol. 79, no. 16Derechos de acceso
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