Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering
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Other documents of the author: Menda, Ugur Deneb; Ribeiro, Guilherme; Deuermeier, Jonas; López, Esther; Nunes, Daniela; Jana, Santanu; Artacho, Irene; Martins, Rodrigo; Mora-Sero, Ivan; Mendes, Manuel Joao; Ramiro, Iñigo
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comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
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https://doi.org/10.1021/acsphotonics.3c00738 |
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Title
Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap EngineeringAuthor (s)
Date
2023-10-18Publisher
American Chemical SocietyISSN
2330-4022Bibliographic citation
Menda, U.D.; Ribeiro, G.; Deuermeier, J.; López, E.; Nunes, D.; Jana, S.; Artacho, I.; Martins, R.; Mora-Seró, I.; Mendes, M.J.; et al. Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering. ACS Photonics 2023, 10, 10, 3647-3655. https://doi.org/10.1021/acsphotonics.3c00738Type
info:eu-repo/semantics/articlePublisher version
https://pubs.acs.org/doi/full/10.1021/acsphotonics.3c00738Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than those of conventional single-junction solar cells. For this, additional requirements ... [+]
By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than those of conventional single-junction solar cells. For this, additional requirements are imposed on the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have emerged as a promising material platform for developing IBSCs. In this work, QDiP solids with good morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated, and by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB → CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs. [-]
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ACS Photonics, 2023, vol. 10, no 10Funder Name
European Union | Fundação para a Ciência e Tecnologia | Ministerio de Ciencia e Innovación
Funder ID
http://dx.doi.org/10.13039/501100011033
Project code
info:eu-repo/grantAgreement/EC/H2020/891686 | info:eu-repo/grantAgreement/EC/H2020/952169 | LA/P/0037/2020 | UIDP/50025/2020 | UIDB/50025/2020 | MCIN/PEICTI2021-2023/RYC2021-034610-I | SFRH/BD/151095/2021
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Copyright © American Chemical Society
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info:eu-repo/semantics/restrictedAccess
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