Buried Interface Passivation of Perovskite Solar Cells by Atomic Layer Deposition of Al2O3
Impacto
Scholar |
Otros documentos de la autoría: Ghosh, Sudeshna; Pariari, Debasmita; Behera, Tejmani; Boix, Pablo P; Ganesh, Narasimha; Basak, Susmita; Vidhan, Arya; Sarda, Nisha; Mora-Sero, Ivan; Chowdhury, Arindam; Narayan, K.S.; Sarma, D. D.; Sarkar, Shaibal
Metadatos
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comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
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INVESTIGACIONMetadatos
Título
Buried Interface Passivation of Perovskite Solar Cells by Atomic Layer Deposition of Al2O3Autoría
Fecha de publicación
2023-04-14Editor
American Chemical SocietyISSN
2380-8195Cita bibliográfica
Ghosh, S.; Pariari, D.; Behera, T.; Boix, P. P.; Ganesh, N.; Basak, S.; Vidhan, A.; Sarda, N.; Mora-Seró, I.; Chowdhury, A.; Narayan, K. S.; Sarma, D. D.; Sarkar, S. K. Buried Interface Passivation of Perovskite Solar Cells by Atomic Layer Deposition of Al2O3. ACS Energy Lett. 2023 8 (4), 2058-2065. DOI: 10.1021/acsenergylett.3c00296Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/full/10.1021/acsenergylett.3c00296Versión
info:eu-repo/semantics/submittedVersionPalabras clave / Materias
Resumen
Despite having long excited carrier lifetimes and high mobilities in hybrid halide perovskite materials, conventional (n-i-p) devices exhibit significant interfacial nonradiative recombination losses that are little ... [+]
Despite having long excited carrier lifetimes and high mobilities in hybrid halide perovskite materials, conventional (n-i-p) devices exhibit significant interfacial nonradiative recombination losses that are little understood but limit the radiative efficiency and the overall open-circuit potential. In this Letter, we reveal that the process of spiro-OMeTAD coating on perovskite gives rise to buried defect states, which are detrimental to the devices’ operational stability. We subsequently report a method to passivate these deleterious buried defect states by atomic layer deposition of Al2O3 through controlled precursor dosages on fully functional devices. The process results in notable improvements in the overall device performance, but the underlying root-cause analysis is what we essentially aimed to elucidate here. The reported passivation technique results in (a) an increase in the efficiency primarily due to an increase of VOC by ∼60–70 mV and consequently (b) enhanced photoluminescence and higher electroluminescence quantum efficiency and (c) overall device operational (MPPT) stability under ambient and, exclusively, even under high vacuum (>300 h) conditions, which is otherwise challenging. [-]
Publicado en
ACS Energy Letters, 2023, vol. 8, no 4Entidad financiadora
Council of Scientific and Industrial Research, India | University Grants Commission | Science and Engineering Research Board
Código del proyecto o subvención
EMR/2017/004878
Derechos de acceso
Copyright © American Chemical Society
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info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/openAccess
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