Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1–xCsx)Pb(I1–xBrx)3 Quantum Dots
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Otros documentos de la autoría: Suri, Mokshin; Hazarika, Abhijit; Larson, Bryon W.; Zhao, Qian; Vallés Pelarda, Marta; Siegler, Timothy; Abney, Michael; Ferguson, Andrew; Korgel, Brian A.; Luther, Joseph M.
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Título
Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1–xCsx)Pb(I1–xBrx)3 Quantum DotsAutoría
Fecha de publicación
2019-07-16Editor
American Chemical SocietyISSN
2380-8195Cita bibliográfica
Mokshin Suri, Abhijit Hazarika, Bryon W. Larson, Qian Zhao, Marta Vallés-Pelarda, Timothy D. Siegler, Michael K. Abney, Andrew J. Ferguson, Brian A. Korgel, and Joseph M. Luther.Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1–xCsx)Pb(I1–xBrx)3 Quantum Dots. ACS Energy Letters 2019 4 (8), 1954-1960 DOI: 10.1021/acsenergylett.9b01030Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/abs/10.1021/acsenergylett.9b01030Versión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
We report a detailed study on APbX3 (A=Formamidinium (FA+), Cs+; X=I-, Br-) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibit, both, a wide bandgap and high open circuit voltage (Voc) ... [+]
We report a detailed study on APbX3 (A=Formamidinium (FA+), Cs+; X=I-, Br-) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibit, both, a wide bandgap and high open circuit voltage (Voc) for the application of a potential top cell in tandem junction photovoltaic (PV) devices. The nanocrystal alloying affords control over the optical bandgap and is readily achieved by solution-phase cation and anion exchange between previously synthesized FAPbI3 and CsPbBr3 PQDs. Increasing only the Br- content of the PQDs widens the bandgap but results in shorter carrier lifetimes and associated Voc losses in devices. These deleterious effects can be mitigated by replacing Cs+ with FA+, resulting in wide bandgap PQD absorbers with improved charge-carrier mobility and PVs with higher Voc. Although further device optimization is required, these results demonstrate the potential of FA1–xCsx)Pb(I1–xBrx)3 PQDs for wide bandgap perovskite PVs with high Voc. [-]
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ACS Energy Letters, 2019, vol. 4, no 8Derechos de acceso
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