Enhanced operational stability through interfacial modification by active encapsulation of perovskite solar cells
Impacto
Scholar |
Otros documentos de la autoría: Ghosh, Sudeshna; Singh, Roja; Subbiah, Anand S.; Boix, Pablo P; Mora-Sero, Ivan; Sarkar, Shaibal
Metadatos
Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/160292
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INVESTIGACIONMetadatos
Título
Enhanced operational stability through interfacial modification by active encapsulation of perovskite solar cellsAutoría
Fecha de publicación
2020Editor
AIP PublishingISSN
0003-6951; 1077-3118Cita bibliográfica
GHOSH, Sudeshna, et al. Enhanced operational stability through interfacial modification by active encapsulation of perovskite solar cells. Applied Physics Letters, 2020, vol. 116, no 11, p. 113502.Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://aip.scitation.org/doi/full/10.1063/1.5144038Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Encapsulates are, in general, the passive components of any photovoltaic device that provides the required shielding from the externally stimulated degradation. Here we provide comprehensive physical insight depicting ... [+]
Encapsulates are, in general, the passive components of any photovoltaic device that provides the required shielding from the externally stimulated degradation. Here we provide comprehensive physical insight depicting a rather non-trivial active nature, in contrast to the supposedly passive, atomic layer deposition (ALD) grown Al2O3 encapsulate layer on the hybrid perovskite [(FA0.83MA0.17)0.95Cs0.05PbI2.5Br0.5] photovoltaic device having the configuration: glass/FTO/SnO2/perovskite/spiro-OMeTAD/Au/(±) Al2O3. By combining various electrical characterization techniques, our experimental observations indicate that the ALD chemistry produces considerable enhancement of the electronic conductivity of the spiro-OMeTAD hole transport medium (HTM), resulting in electronic modification of the perovskite/HTM interface. Subsequently, the modified interface provides better hole extraction and lesser ionic accumulation at the interface, resulting in a significant lowering of the burn-in decay and nearly unchanged charge transport parameters explicitly under the course of continuous operation. Unlike the unencapsulated device, the modified electronic structure in the Al2O3 coated device is essentially the principal reason for better performance stability. Data presented in this communication suggest that the ionic accumulation at the spiro-OMeTAD/perovskite interface triggers the device degradation in the uncoated devices, which is eventually followed by material degradation, which can be avoided by active encapsulation. [-]
Publicado en
Applied Physics Letters, 2020, vol. 116, no 11Derechos de acceso
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- INAM_Articles [518]