Listar por tema "Quantum electronics"

Mostrando ítems 1-4 de 4

    • openAccess   Effect of strain and variable mass on the formation of antibonding hole ground states in InAs quantum dot molecules 

      Planelles, Josep; Climente, Juan I.; Rajadell Viciano, Fernando; Doty, Matthew F.; Bracker, Allan S.; Gammon, Daniel American Physical Society (2010-10-04)
      Using four-band k·p Hamiltonians, we study how biaxial strain and position-dependent effective masses influence hole tunneling in vertically coupled InAs/GaAs quantum dots. Strain reduces the tunneling and hence the critical ...

    • openAccess   Hole spin mixing in InAs Quantum Dot Molecules 

      Doty, Matthew F.; Climente, Juan I.; Greilich, A.; Yakes, Michael; Bracker, Allan S.; Gammon, Daniel American Physical Society (2010)
      The spin state of holes confined in single InAs quantum dots have recently emerged as a promising system for the storage or manipulation of quantum information. These holes are often assumed to have no mixing between ...

    • openAccess   Large hole spin anticrossings in InAs/GaAs double quantum dots 

      Rajadell Viciano, Fernando; Planelles, Josep; Climente, Juan I. AIP Publishing (2013-09-23)
      We show that hole states in InAs/GaAs double quantum dots can exhibit spin anticrossings of up to 1 meV, according to simulations with a three dimensional Burt-Foreman Hamiltonian including strain and piezoelectric fields. ...

    • openAccess   Mixed correlation phases in elongated quantum dots 

      Ballester Caudet, Ana; Escartín, J. M.; Movilla, Jose L.; Pi, Martí; Planelles, Josep American Physical Society (2010-09-07)
      It is theoretically shown, within the local spin-density-functional theory framework, that inhomogeneous confining potentials in elongated, diluted N-electron quantum dots may lead to the formation of mixed phases in which ...