High performing PbS Quantum Dot Sensitized Solar Cells exceeding 4% efficiency: The role of metal precursor in the electron injection and charge separation
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Otros documentos de la autoría: González Pedro, Victoria; Sima, Cornelia; Marzari, Gabriela; Boix, Pablo P; Gimenez, Sixto; Qing, Shen; Dittrich, Thomas; Mora-Sero, Ivan
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Título
High performing PbS Quantum Dot Sensitized Solar Cells exceeding 4% efficiency: The role of metal precursor in the electron injection and charge separationAutoría
Fecha de publicación
2013Editor
Royal Society of ChemistryISSN
1463-9076; 1463-9084Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://pubs.rsc.org/en/content/articlepdf/2013/cp/c3cp51651bVersión
info:eu-repo/semantics/submittedVersionPalabras clave / Materias
Resumen
Here we report the preparation of high performance Quantum Dot Sensitized Solar Cells (QDSCs) based on
PbS–CdS co-sensitized nanoporous TiO2 electrodes. QDs were directly grown on the TiO2 mesostructure by
the ... [+]
Here we report the preparation of high performance Quantum Dot Sensitized Solar Cells (QDSCs) based on
PbS–CdS co-sensitized nanoporous TiO2 electrodes. QDs were directly grown on the TiO2 mesostructure by
the Successive Ionic Layer Absorption and Reaction (SILAR) technique. This method is characterized by a
fast deposition rate which involves random crystal growth and poor control of the defect states and
lattice mismatch in the QDs limiting the quality of the electrodes for photovoltaic applications. In this
work we demonstrate that the nature of the metallic precursor selected for SILAR has an active role in
both the QD’s deposition rate and the defect’s distribution in the material, with important
consequences for the final photovoltaic performance of the device. For this purpose, acetate and
nitrate salts were selected as metallic precursors for the SILAR deposition and films with similar
absorption properties and consequently with similar density of photogenerated carriers were studied.
Under these conditions, ultrafast carrier dynamics and surface photovoltage spectroscopy reveal that
the use of acetate precursors leads to higher injection efficiency and lower internal recombination due
to contribution from defect states. This was corroborated in a complete cell configuration with films
sensitized with acetate precursors, achieving unprecedented photocurrents of B22 mA cm2 and high
power conversion efficiency exceeding 4%, under full 1 sun illumination. [-]
Publicado en
Phys. Chem. Chem. Phys., 2013, Volume 15, Issue 33Derechos de acceso
This journal is © the Owner Societies 2013
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