Relaxation of Photogenerated Carriers in P3HT:PCBM Organic Blends
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Scholar |
Otros documentos de la autoría: Moehl, Thomas; Kytin, Vladimir G.; Bisquert, Juan; Kunst, Marinus; Bolink, Henk J.; Garcia-Belmonte, Germà
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1002/cssc.200900002 |
Metadatos
Título
Relaxation of Photogenerated Carriers in P3HT:PCBM Organic BlendsAutoría
Fecha de publicación
2009Editor
WileyISSN
1864-5631Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
http://onlinelibrary.wiley.com/doi/10.1002/cssc.200900002/abstractVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Relaxing in the sunlight. Long time-transient decays of photogenerated carriers in P3HT:PCBM blends for organic solar cells are interpreted in terms of the relaxation of hole carriers in a broad density of states.
The ... [+]
Relaxing in the sunlight. Long time-transient decays of photogenerated carriers in P3HT:PCBM blends for organic solar cells are interpreted in terms of the relaxation of hole carriers in a broad density of states.
The after-pulse time-resolved microwave conductivity (TRMC) decays observed in P3HT:PCBM blends display a dependence on time close to t−β, independent of excitation intensity, in the 10 ns–1 μs range. This is explained in terms of the relaxation of carriers in a Gaussian density of states (DOS). The model is based on a demarcation level that moves with time by thermal release and retrapping of initially trapped carriers. The model shows that when the disorder is large the after-pulse decay of the type t−β is obtained, while at low disorder and large temperature the carrier distribution becomes independent of time. In the measurements different β values were observed depending on the solvent used for spin-coating: 0.4–0.6 for chlorobenzene and 0.3–0.4 for toluene. The model was applied to extract the shape of the DOS from the TRMC decays, giving a dispersion parameter of about 120 meV for blends with high P3HT content. [-]
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ChemSusChem, 2, 4, p. 314-320Derechos de acceso
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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