Magnetic field implementation in multiband k⋅p Hamiltonians of holes in semiconductor heterostructures
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Magnetic field implementation in multiband k⋅p Hamiltonians of holes in semiconductor heterostructuresData de publicació
2013Editor
IOP PublishingISSN
0953-8984; 1361-648XCita bibliogràfica
PLANELLES, Josep; CLIMENTE, Juan I. Magnetic field implementation in multiband k⋅ p Hamiltonians of holes in semiconductor heterostructures. Journal of Physics: Condensed Matter, 2013, vol. 25, no 48, p. 485801.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://iopscience.iop.org/0953-8984/25/48/485801Versió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Descripció
We propose an implementation of external homogeneous magnetic fields in kṡp Hamiltonians for holes in heterostructures, in which we make use of the minimal coupling prior to introducing the envelope function approxi ... [+]
We propose an implementation of external homogeneous magnetic fields in kṡp Hamiltonians for holes in heterostructures, in which we make use of the minimal coupling prior to introducing the envelope function approximation. Illustrative calculations for holes in InGaAs quantum dot molecules show that the proposed Hamiltonian outperforms the standard Luttinger model (Luttinger 1956 Phys. Rev. 102 1030) describing the experimentally observed magnetic response. The present implementation culminates our previous proposal (Planelles et al 2010 Phys. Rev. B 82 155307). [-]
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Journal of Physics: Condensed Matter (2013) vol. 25, no 48Drets d'accés
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