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dc.contributor.authorClimente, Juan I.
dc.contributor.authorSegarra, Carlos
dc.contributor.authorPlanelles, Josep
dc.date.accessioned2014-03-06T16:34:02Z
dc.date.available2014-03-06T16:34:02Z
dc.date.issued2013
dc.identifier.issn1367-2630
dc.identifier.urihttp://hdl.handle.net/10234/85810
dc.description.abstractWe study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully three-dimensional Hamiltonian. We show that hh–lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. Simultaneously accounting for both mechanisms is necessary for quantitatively correct results in quasi-two-dimensional QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments.ca_CA
dc.format.extent21 p.ca_CA
dc.format.mimetypeapplication/pdfca_CA
dc.language.isoengca_CA
dc.publisherInstitute of Physicsca_CA
dc.relation.isPartOfNew Journal of Physics, 2013, vol. 15, article number 093009ca_CA
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaftca_CA
dc.rights.urihttp://creativecommons.org/licenses/by-sa/4.0/
dc.subjectHole-spin relaxation
dc.subjectSpin orbit interactions
dc.subjectEngineering controlled terms
dc.subjectSpin orbits
dc.subjectBulk inversion asymmetry
dc.subjectSpin relaxation
dc.subjectSemiconductor quantum dots
dc.subjectEngineering main heading
dc.titleSpin–orbit-induced hole spin relaxation in InAs and GaAs quantum dotsca_CA
dc.typeinfo:eu-repo/semantics/articleca_CA
dc.identifier.doihttp://dx.doi.org/10.1088/1367-2630/15/9/093009
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca_CA
dc.relation.publisherVersionhttp://iopscience.iop.org/1367-2630/15/9/093009/pdf/1367-2630_15_9_093009.pdfca_CA
dc.type.versioninfo:eu-repo/semantics/publishedVersionca_CA


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Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence.
Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal
citation and DOI.
 © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft
Excepto si se señala otra cosa, la licencia del ítem se describe como: Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft