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Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots
dc.contributor.author | Climente, Juan I. | |
dc.contributor.author | Segarra, Carlos | |
dc.contributor.author | Planelles, Josep | |
dc.date.accessioned | 2014-03-06T16:34:02Z | |
dc.date.available | 2014-03-06T16:34:02Z | |
dc.date.issued | 2013 | |
dc.identifier.issn | 1367-2630 | |
dc.identifier.uri | http://hdl.handle.net/10234/85810 | |
dc.description.abstract | We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully three-dimensional Hamiltonian. We show that hh–lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. Simultaneously accounting for both mechanisms is necessary for quantitatively correct results in quasi-two-dimensional QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments. | ca_CA |
dc.format.extent | 21 p. | ca_CA |
dc.format.mimetype | application/pdf | ca_CA |
dc.language.iso | eng | ca_CA |
dc.publisher | Institute of Physics | ca_CA |
dc.relation.isPartOf | New Journal of Physics, 2013, vol. 15, article number 093009 | ca_CA |
dc.rights | Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft | ca_CA |
dc.rights.uri | http://creativecommons.org/licenses/by-sa/4.0/ | |
dc.subject | Hole-spin relaxation | |
dc.subject | Spin orbit interactions | |
dc.subject | Engineering controlled terms | |
dc.subject | Spin orbits | |
dc.subject | Bulk inversion asymmetry | |
dc.subject | Spin relaxation | |
dc.subject | Semiconductor quantum dots | |
dc.subject | Engineering main heading | |
dc.title | Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots | ca_CA |
dc.type | info:eu-repo/semantics/article | ca_CA |
dc.identifier.doi | http://dx.doi.org/10.1088/1367-2630/15/9/093009 | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca_CA |
dc.relation.publisherVersion | http://iopscience.iop.org/1367-2630/15/9/093009/pdf/1367-2630_15_9_093009.pdf | ca_CA |
dc.type.version | info:eu-repo/semantics/publishedVersion | ca_CA |
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© IOP Publishing Ltd and Deutsche Physikalische Gesellschaft