Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots
comunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
comunitat-uji-handle4:
INVESTIGACIONMetadata
Title
Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dotsDate
2013Publisher
Institute of PhysicsISSN
1367-2630Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/publishedVersionSubject
Abstract
We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit ... [+]
We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh–lh) mixing and all the spin–orbit terms arising from zinc-blende bulk inversion asymmetry (BIA) are considered on equal footing in a fully three-dimensional Hamiltonian. We show that hh–lh mixing and BIA have comparable contributions to the hole spin relaxation in self-assembled QDs, but BIA becomes dominant in gated QDs. Simultaneously accounting for both mechanisms is necessary for quantitatively correct results in quasi-two-dimensional QDs. The dependence of the hole spin relaxation on the QD geometry and spin splitting energy is drastically different from that of electrons, with a non-monotonic behavior which results from the interplay between SOI terms. Our results reconcile contradictory predictions of previous theoretical works and are consistent with experiments. [-]
Is part of
New Journal of Physics, 2013, vol. 15, article number 093009Rights
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