Hole Transport and Recombination in All-Solid Sb2S3-Sensitized TiO2 Solar Cells Using CuSCN As Hole Transporter
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Altres documents de l'autoria: Boix, Pablo P; Larramona, Gerardo; Jacob, Alain; Delatouche, Bruno; Mora-Sero, Ivan; Bisquert, Juan
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Títol
Hole Transport and Recombination in All-Solid Sb2S3-Sensitized TiO2 Solar Cells Using CuSCN As Hole TransporterAutoria
Data de publicació
2012Editor
American Chemical SocietyISSN
1932-7447Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
http://pubs.acs.org/doi/abs/10.1021/jp210002cVersió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
All-solid semiconductor-sensitized solar cells lack models allowing their characterization in terms of the fundamental processes of charge transport and recombination. Nanostructured TiO 2/Sb 2S 3/CuSCN solar cells ... [+]
All-solid semiconductor-sensitized solar cells lack models allowing their characterization in terms of the fundamental processes of charge transport and recombination. Nanostructured TiO 2/Sb 2S 3/CuSCN solar cells were characterized by impedance spectroscopy, and a model was proposed for this type of cells. One important feature resulting from this analysis was the hole transport diffusion, which could be assimilated to a series resistance affecting the cell fill factor. The other important feature was the recombination rate, which could be described in a similar manner as other cells using nanostructured TiO 2 electrodes and which had an important impact on the open circuit. A simulation of the current-voltage curves using such model allowed us to get an approximate quantification of the losses caused by each process and to evaluate the possible improvements on the performance of this kind of cell. [-]
Publicat a
The Journal of Physical Chemistry C, 116, 1Drets d'accés
This document is the Accepted Manuscript version of a Published Work that appeared in final form in for publication in The Journal Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/jp210002c
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info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
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