Carrier recombination losses in inverted polymer: Fullerene solar cells with ZnO hole-blocking layer from transient photovoltage and impedance spectroscopy techniques.
Impact
Scholar |
Other documents of the author: Garcia-Belmonte, Germà; Pérez Boix, Pablo; Ajuria, Jon; Palacios, Roberto
Metadata
Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
comunitat-uji-handle4:
INVESTIGACIONThis resource is restricted
http://dx.doi.org/10.1063/1.3561437 |
Metadata
Title
Carrier recombination losses in inverted polymer: Fullerene solar cells with ZnO hole-blocking layer from transient photovoltage and impedance spectroscopy techniques.Date
2011-04Publisher
© 2011 American Institute of PhysicsISSN
0021-8979Type
info:eu-repo/semantics/articlePublisher version
http://jap.aip.org/resource/1/japiau/v109/i7/p074514_s1Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
In this study, full coincidence between impedance spectroscopy and transient photovoltage techniques in measuring recombination kinetics of photogenerated charge carriers in inverted polymer:fullerene organic solar ... [+]
In this study, full coincidence between impedance spectroscopy and transient photovoltage techniques in measuring recombination kinetics of photogenerated charge carriers in inverted polymer:fullerene organic solar cells with ZnO hole-blocking layer is reported. Carrier lifetime exhibits values at illumination intensities near 1 sun within the microseconds time scale. Photogenerated charge carrier density attains values within 1015–1016 cm−3. Decay kinetics is analyzed by means of a bimolecular recombination law with a recombination coefficient slightly dependent on the charge density, which lies within the order of k ∼ 10−12 cm3 s−1. It is also demonstrated that inverted-processed cells exhibit capacitance, recombination resistance, and lifetime parameters comparable to those extracted from regular cells, despite the great differences between the contact structures of these kinds of devices. [-]
Is part of
Journal of Applied Physics (April 2011), vol. 109, no. 7Rights
http://rightsstatements.org/vocab/CNE/1.0/
info:eu-repo/semantics/restrictedAccess
info:eu-repo/semantics/restrictedAccess
This item appears in the folowing collection(s)
- FCA_Articles [502]