Electro deposited In2S3 buffer layers for CuInS2 solar cells
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Scholar |
Otros documentos de la autoría: Todorov, Teodor Krassimirov; Carda Castelló, Juan Bautista; Escribano López, Purificación; Grimm, A.; Klaer, J.; Klenk, R.
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http://dx.doi.org/10.1016/j.solmat.2008.04.022 |
Metadatos
Título
Electro deposited In2S3 buffer layers for CuInS2 solar cellsAutoría
Fecha de publicación
2008Editor
ElsevierISSN
9270248Cita bibliográfica
Solar Energy Materials and Solar Cells, 92, 10, p. 1274-1278Tipo de documento
info:eu-repo/semantics/articlePalabras clave / Materias
Resumen
We report the electro deposition of In2S3 buffer layers for CuInS2 solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential ... [+]
We report the electro deposition of In2S3 buffer layers for CuInS2 solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential transfer to large volume industrial production. Different bath compositions and electro deposition parameters were studied. The obtained films exhibited complete substrate coverage, confirmed by SEM and XPS. In/S ratio close to 2/3 was obtained. XPS measurements detected the presence of indium hydroxide, transforming into oxide upon anneal at 200 °C. Maximum photoelectric conversion efficiency of 7.1% was obtained, limited mainly by a low fill factor (51%). Further process optimization is expected to lead to efficiencies comparable to CdS buffers. So far, open-circuit voltages as high as 660 mV were demonstrated. © 2008 Elsevier B.V. All rights reserved. [-]
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info:eu-repo/semantics/restrictedAccess
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