Charge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopy
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Scholar |
Otros documentos de la autoría: Garcia-Belmonte, Germà; Munar, Antoni; Barea, Eva M; Bisquert, Juan; Ugarte, Irati; Pacios, Roberto
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Mostrar el registro completo del ítemcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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http://dx.doi.org/10.1016/j.orgel.2008.06.007 |
Metadatos
Título
Charge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopyAutoría
Fecha de publicación
2008Editor
ElsevierISSN
15661199Cita bibliográfica
Organic Electronics: physics, materials, applications, 9, 5, p. 847-851Tipo de documento
info:eu-repo/semantics/articleVersión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Charge carrier diffusion and recombination in an absorber blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C<sub>61</sub>-butyric acid methyl ester (PCBM) with indium tin oxide (ITO) and aluminium contacts have ... [+]
Charge carrier diffusion and recombination in an absorber blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C<sub>61</sub>-butyric acid methyl ester (PCBM) with indium tin oxide (ITO) and aluminium contacts have been analyzed in the dark by means of impedance spectroscopy. Reverse bias capacitance exhibits Mott-Schottky-like behavior indicating the formation of a Schottky junction (band bending) at the P3H:PCBM-Al contact. Impedance measurements show that minority carrier (electrons) diffuse out of the P3HT:PCBM-Al depletion zone and their accumulation contributes to the capacitive response at forward bias. A diffusion-recombination impedance model accounting for the mobility and lifetime parameters is outlined. Electron mobility results to be 2 × 10<sup>-3</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and lifetime lies within the milliseconds timescale. © 2008 Elsevier B.V. All rights reserved. [-]
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