Dielectric confinement of excitons in type-I and type-II semiconductor nanorods
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Altres documents de l'autoria: Royo Valls, Miguel; Climente, Juan I.; Movilla, Jose L.; Planelles, Josep
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Dielectric confinement of excitons in type-I and type-II semiconductor nanorodsData de publicació
2011-01-12Editor
Institute of PhysicsISSN
0953-8984; 1361-648XCita bibliogràfica
Journal of physics. Condensed matter (12 Jan. 2011), vol. 23, no. 1, 015301 (8 p.)Tipus de document
info:eu-repo/semantics/articleVersió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift ... [+]
We theoretically study the effect of the dielectric environment on the exciton ground state of CdSe and CdTe/CdSe/CdTe nanorods. We show that insulating environments enhance the exciton recombination rate and blueshift the emission peak by tens of meV. These effects are particularly pronounced for type- II nanorods. In these structures, the dielectric confinement may even modify the spatial distribution of electron and hole charges. A critical electric field is required to separate electrons from holes, whose value increases with the insulating strength of the surroundings [-]
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