Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor
Impacto
Scholar |
Otros documentos de la autoría: Fernandez-Guillen, Ismael; Aranda Alonso, Clara; Franco Betancur, Pablo; Vallés-Pelarda, Marta; Momblona, Cristina; Ripolles, Teresa S.; Abargues, Rafael; Boix, Pablo P
Metadatos
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INVESTIGACIONMetadatos
Título
Perovskite Thin Single Crystal for a High Performance and Long Endurance MemristorAutoría
Fecha de publicación
2024Editor
WileyISSN
2199-160XCita bibliográfica
I. Fernandez-Guillen, C. A. Aranda, P. F. Betancur, M. Vallés-Pelarda, C. Momblona, T. S. Ripolles, R. Abargues, P. P. Boix, Perovskite Thin Single Crystal for a High Performance and Long Endurance Memristor. Adv. Electron. Mater. 2024, 2300475. https://doi.org/10.1002/aelm.202300475Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202300475Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, ... [+]
Metal halide perovskites (MHPs) exhibit electronic and ionic characteristics suitable for memristors. However, polycrystalline thin film perovskite memristors often suffer from reliability issues due to grain boundaries, while bulk single-crystal perovskite memristors struggle to achieve high LRS/HRS ratios. In this study, a single crystal memristive device utilizing a wide bandgap perovskite is introduced, MAPbBr3, in a high surface/thickness configuration. This thin single crystal overcomes these challenges, exhibiting a remarkable LRS/HRS ratio of up to 50 and endurance of 103 cycles, representing one of the highest reported values to date. This exceptional stability enables to analyze the electroforming process and LRS through impedance spectroscopy, providing insights into the underlying operational mechanism. As far as it is known, this is the first reported thin single-crystal MHP memristor device and the first time that the electroforming process is recorded through impedance spectroscopy. This device's outstanding stability and performance position it as a promising candidate for high-density data storage and neuromorphic applications. [-]
Publicado en
Advanced Electronic Materials, 2024Entidad financiadora
European Union | Ministerio de Ciencia, Innovación y Universidades | Generalitat Valenciana | Ministerio de Ciencia e Innovación
Identificador de la entidad financiadora
http://dx.doi.org/10.13039/501100011033
Código del proyecto o subvención
MGS/2021/24(UP2021‐021) | MICIU/ICTI2017-2020/PID2020-119628RB-C31) | CIDEXG/2022/34 | CDEIGENT/2021/2022 | MFA/2022/040 /007 | MCIN/PEICTI2021-2023/TED2021-131600B-C32
Título del proyecto o subvención
Perovskitas de metal haluro: nuevas estructuras para nuevos retos
Derechos de acceso
info:eu-repo/semantics/openAccess
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- INAM_Articles [528]
Excepto si se señala otra cosa, la licencia del ítem se describe como: © 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited