Unusual Spectrally Reproducible and High Q-Factor Random Lasing in Polycrystalline Tin Perovskite Films
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
comunitat-uji-handle4:
INVESTIGACIONMetadata
Title
Unusual Spectrally Reproducible and High Q-Factor Random Lasing in Polycrystalline Tin Perovskite FilmsAuthor (s)
Date
2022Publisher
WileyISSN
0935-9648; 1521-4095Bibliographic citation
Chirvony, V. S., Suárez, I., Sanchez-Diaz, J., Sánchez, R. S., Rodríguez-Romero, J., Mora-Seró, I., Martínez-Pastor, J. P., Unusual Spectrally Reproducible and High Q-Factor Random Lasing in Polycrystalline Tin Perovskite Films. Adv. Mater. 2023, 2208293. https://doi.org/10.1002/adma.202208293Type
info:eu-repo/semantics/articlePublisher version
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202208293Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
An unusual spectrally reproducible near-IR random lasing (RL) with no fluctuation of lasing peak wavelength is disclosed in polycrystalline films of formamidinium tin triiodide perovskite, which have been chemically ... [+]
An unusual spectrally reproducible near-IR random lasing (RL) with no fluctuation of lasing peak wavelength is disclosed in polycrystalline films of formamidinium tin triiodide perovskite, which have been chemically stabilized against Sn2+ to Sn4+ oxidation. Remarkably, a quality Q-factor as high as ≈104 with an amplified spontaneous emission (ASE) threshold as low as 2 µJ cm−2 (both at 20 K) are achieved. The observed spectral reproducibility is unprecedented for semiconductor thin film RL systems and cannot be explained by the strong spatial localization of lasing modes. Instead, it is suggested that the spectral stability is a result of such an unique property of Sn-based perovskites as a large inhomogeneous broadening of the emitting centers, which is a consequence of an intrinsic structural inhomogeneity of the material. Due to this, lasing can occur simultaneously in modes that are spatially strongly overlapped, as long as the spectral separation between the modes is larger than the homogeneous linewidth of the emitting centers. The discovered mechanism of RL spectral stability in semiconductor materials, possessing inhomogeneous broadening, opens up prospects for their practical use as cheap sources of narrow laser lines. [-]
Is part of
Advanced Materials, 2022Funder Name
European Commission | Ministerio de Ciencia, Innovación y Universidades
Funder ID
http://dx.doi.org/10.13039/501100011033
Project code
info:eu-repo/grantAgreement/EC/H2020/862656 | MICIU/ICTI2017-2020/PID2019-107314RB-I00 | MICIU/ICTI2017-2020/PID2020-120484RB-I00
Project title or grant
Nuevas Perovskitas de Haluro Obtenidas Mediante la Estabilización de la Fase Perovskita a Través de la Energía Superficial para Dispositivos Optoelectrónicos Avanzados | Perovskitas semiconductoras integradas en estructuras fotónicas para dispositivos inteligentes de emission y conmutación de luz
Rights
info:eu-repo/semantics/openAccess
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