Directional and Polarized Lasing Action on Pb-free FASnI3 Integrated in Flexible Optical Waveguide
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Other documents of the author: Suárez, Isaac; Chirvony, Vladimir; Sanchez-Diaz, Jesus; S. Sánchez, Rafael; Mora-Sero, Ivan; Martínez-Pastor, Juan P.
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/160292
comunitat-uji-handle3:10234/160293
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INVESTIGACIONMetadata
Title
Directional and Polarized Lasing Action on Pb-free FASnI3 Integrated in Flexible Optical WaveguideAuthor (s)
Date
2022ISSN
2195-1071Bibliographic citation
Suárez, I., Chirvony, V. S., Sánchez-Díaz, J., Sánchez, R. S., Mora-Seró, I., Martínez-Pastor, J. P., Directional and Polarized Lasing Action on Pb-free FASnI3 Integrated in Flexible Optical Waveguides. Adv. Optical Mater. 2022, 2200458. https://doi.org/10.1002/adom.202200458Type
info:eu-repo/semantics/articlePublisher version
https://onlinelibrary.wiley.com/doi/10.1002/adom.202200458Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
In this work, high-quality FASnI3 (FA, formamidinium) lead-free perovskite thin films are successfully incorporated in a flexible polyethylene terephthalate (PET) substrate to demonstrate amplified spontaneous emission ... [+]
In this work, high-quality FASnI3 (FA, formamidinium) lead-free perovskite thin films are successfully incorporated in a flexible polyethylene terephthalate (PET) substrate to demonstrate amplified spontaneous emission (ASE) and lasing. The waveguide (WG) consists of polymethylmethacrylate(PMMA)/FASnI3 bilayer deposited on a PET substrate and is properly designed to allow single-mode propagation at the photoluminescence wavelength. This geometry optimizes the excitation of the emitting FASnI3, enhances the light−matter interaction in the semiconductor thin film, provides a preferable direction for the emitted light and allows its direct outcoupling for on-chip or fiber-optic applications. As far as the authors know, ASE and random lasing are obtained for the first time in a flexible-based WG integrating a highly efficient lead-free perovskite. The high quality of the deposited films and the optimized design of the structure result in an extremely low ASE/lasing threshold in the range of 1 µJ cm−2, which is only ten times higher than that measured in the same PMMA/FASnI3 structure deposited on a rigid substrate (Si/SiO2). More interestingly, these WGs exhibit a strong polarization anisotropy for the outcoupled ASE/lasing light with a preferable transverse electric polarization. This work is the base for the future development of ecofriendly, flexible, and efficient photonic devices. [-]
Is part of
Advanced Optical Materials, 2022Funder Name
European Union | European Research Council | Ministerio de Economía, Industria y Competitividad
Project code
724424 | MICIU/ICTI2017-2020/PID2020-120484RB-I00 | MICIU/ICTI2017-2020/PID2019-107314RB-I00
Investigation project
info:eu-repo/grantAgreement/EC/H2020/862656Rights
info:eu-repo/semantics/openAccess
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- INAM_Articles [508]