Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films
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Show full item recordcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/7053
comunitat-uji-handle3:10234/8639
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Title
Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin FilmsAuthor (s)
Date
2021-11-01Publisher
MDPIISSN
2076-3417Bibliographic citation
Porcar, S.; González, J.; Fraga, D.; Stoyanova Lyubenova, T.; Soraca, G.; Carda, J.B. Effect of Al, Ga, and In Doping on the Optical, Structural, and Electric Properties of ZnO Thin Films. Appl. Sci. 2021, 11, 10122. https://doi.org/10.3390/app112110122Type
info:eu-repo/semantics/articlePublisher version
https://www.mdpi.com/2076-3417/11/21/10122Version
info:eu-repo/semantics/publishedVersionSubject
Abstract
ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn1-xMxO1−y (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure ... [+]
ZnO thin films with oxygen vacancies and doped with Al, Ga, and In (Zn1-xMxO1−y (x = 0.03)) have been successfully deposited on soda-lime glass substrates using a simple soft chemical method. The crystalline structure shows a single hexagonal phase of wurtzite with preferred crystal growth along the 002 plane. The surface morphology, characterized by SEM, revealed that the grain shape varies depending on the dopant agent used. Optical measurements displayed an increase in the bandgap values for doped films from 3.29 for ZnO to 3.35, 3.32, and 3.36 for Al, Ga, and In doped films, respectively, and an average transmittance superior to 90% in some cases (in the range between 400 and 800 nm). The electrical response of the films was evaluated with a four-point probe being 229.69, 385.71, and 146.94 Ω/sq for aluminium, gallium, and indium doped films, respectively. [-]
Is part of
Applied Sciences, 2021, vol. 11, no 21Funder Name
Ministerio de Economía y Competitividad (España)
Investigation project
ENE2017-87671-C3-3-RPID2020-116719RB-C43
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info:eu-repo/semantics/openAccess
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