Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system
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Altres documents de l'autoria: Gonzales, Cedric; Prieto, Elizabeth Ann; Catindig, Gerald Angelo; Reyes Moreno, Alexander; Faustino, Maria Angela; Tumanguil-Quitoras, Mae Agatha; Husay, Horace Andrew; Vasquez, John Daniel; Somintac, Armando; Estacio, Elmer; Salvador, Arnel
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
comunitat-uji-handle2:10234/2507
comunitat-uji-handle3:10234/6973
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Títol
Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer systemAutoria
Data de publicació
2021-04-22Editor
American Statistical Association; International Biometrics Society; Springer VerlagISSN
1085-7117; 1537-2693Cita bibliogràfica
Gonzales, K.C., Prieto, E.A., Catindig, G.A. et al. Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system. J Mater Sci: Mater Electron 32, 13825–13836 (2021). https://doi.org/10.1007/s10854-021-05958-8Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://www.springer.com/journal/10854Versió
info:eu-repo/semantics/acceptedVersionParaules clau / Matèries
Resum
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different ... [+]
Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320 °C, 520 °C and 630 °C). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at Ts = 600 °C. Reflection high energy electron diffraction confirms the layer-by-layer growth mode of the GaAs on Si. X-ray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz time-domain spectroscopy is performed in reflection and transmission excitation geometries. At Ts = 320 °C, the low crystallinity of GaAs on Si makes it an inferior THz emitter in reflection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher Ts, the GaAs on Si thin films emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identified from scanning electron microscopy and Raman spectroscopy. An intense THz emission in reflection and transmission excitation geometries is observed for the GaAs on Si grown at Ts = 520 °C, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most efficient in both excitation geometries. The results are significant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices. [-]
Publicat a
Journal of Materials Science: Materials in Electronics, volume 32, pages13825–13836 (2021)Entitat finançadora
University of the Philippines Diliman | Commission on Higher Education Philippine—California Advanced Research Institutes
Codi del projecte o subvenció
IIID-2015-013
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© 2021 Springer Nature Switzerland AG
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info:eu-repo/semantics/openAccess
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info:eu-repo/semantics/openAccess
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