Characterization of Aerosol Deposited Cesium Lead Tribromide Perovskite Films on Interdigited ITO Electrodes
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Altres documents de l'autoria: These, Albert; Khansur, Neamul H; Almora Rodríguez, Osbel; Luer, Larry; Matt, Gebhard J.; Eckstein, Udo; Barabash, Anastasia; Osvet, Andres; Webber, Kyle; Brabec, Christoph J.
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Mostra el registre complet de l'elementcomunitat-uji-handle:10234/9
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comunitat-uji-handle3:10234/6973
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INVESTIGACIONMetadades
Títol
Characterization of Aerosol Deposited Cesium Lead Tribromide Perovskite Films on Interdigited ITO ElectrodesAutoria
Data de publicació
2021-01-15Editor
John Wiley & SonsISSN
2199-160XCita bibliogràfica
BRABEC, C.J., 2021. Characterization of Aerosol Deposited Cesium Lead Tribromide Perovskite Films on Interdigited ITO Electrodes. Advanced Electronic Materials, vol. 7, no. 3. ISSN 2199-160X. DOI 10.1002/aelm.202001165.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202001165Versió
info:eu-repo/semantics/publishedVersionParaules clau / Matèries
Resum
Aerosol deposition (AD) is a promising additive manufacturing method to fabricate low-cost, scalable films at room temperature, but has not been considered for semiconductor processing, so far. The successful preparation ... [+]
Aerosol deposition (AD) is a promising additive manufacturing method to fabricate low-cost, scalable films at room temperature, but has not been considered for semiconductor processing, so far. The successful preparation of cesium lead tribromide (CsPbBr) perovskite films on interdigitated indium tin oxide (ITO) electrodes by means of AD is reported here. The – µm thick layers are dense and have good adhesion to the substrate. The orthorhombic Pnma crystal structure of the precursor powder was retained during the deposition process with no signs of defect formation. The formation of electronic defects by photoluminescence spectroscopy is investigated and found slightly increased carrier recombination from defect sites for AD films compared to the powder. A nonuniform defect distribution across the layer, presumably induced by the impact of the semiconducting grains on the hard substrate surface, is revealed. The opto-electronic properties of AD processed semiconducting films is further tested by electrical measurements and confirmed good semiconducting properties and high responsivity for the films. These results demonstrate that AD processing of metal halide perovskites is possible for opto-electronic device manufacturing on D surfaces. It is believed that this work paves the way for the fabrication of previously unimaginable opto-electronic devices by additive manufacturing. [-]
Publicat a
Advanced Electronic Materials, vol. 7, no. 3Entitat finançadora
VDI/VD Innovation + Technik GmbH | Erlangen Graduate School in Advanced Optical Technologies (SAOT) by the Bavarian State Ministry for Science and Art | German Research Foundation (DFG)
Codi del projecte o subvenció
MA 6617/1-1 | IGK2495/E | IGK2495/F
Drets d'accés
info:eu-repo/semantics/openAccess
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