Effect of pore generator on microstructure and resistivity of Sb(2)O(3)and CuO doped SnO(2)electrodes
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Otros documentos de la autoría: Sánchez-Rivera, María José; Gozalbo, Ana; Pérez-Herranz, Valentín; Mestre Beltrán, Sergio
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https://doi.org/10.1007/s10934-020-00959-0 |
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Título
Effect of pore generator on microstructure and resistivity of Sb(2)O(3)and CuO doped SnO(2)electrodesFecha de publicación
2020-08-08Editor
SpringerISSN
1380-2224; 1380-2224Cita bibliográfica
Sánchez-Rivera, MJ., Gozalbo, A., Pérez-Herranz, V. et al. Effect of pore generator on microstructure and resistivity of Sb2O3 and CuO doped SnO2 electrodes. J Porous Mater 27, 1801–1808 (2020). https://doi.org/10.1007/s10934-020-00959-0Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://www.springer.com/journal/10934Versión
info:eu-repo/semantics/publishedVersionPalabras clave / Materias
Resumen
Sb2O3 and CuO doped SnO2 ceramic electrodes could be an alternative to the ones currently used ones in the electrooxidation process of water pollutants. The rise of electrode surface by introducing a porogen agent on ... [+]
Sb2O3 and CuO doped SnO2 ceramic electrodes could be an alternative to the ones currently used ones in the electrooxidation process of water pollutants. The rise of electrode surface by introducing a porogen agent on the composition was analysed in order to increase the electrochemical active surface. For this reason, several substances were tested. Although the densification and total pore volume had similar values, the microstructures and the pore size distributions generated were strongly dependent on porogen nature. A total of five porogens were tested, but petroleum coke turned out to be the best option for these electrodes. It was found that the electrical resistivity depends on the nature of pore generator. Furthermore, its relation to the porosity can be modelled with Archie’s or Pabst’s equations. [-]
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Journal of Porous Materials (2020) 27:1801–1808Proyecto de investigación
(Projects: CTQ2015-65202-C2-1-R, CTQ2015-65202-C2-2-RDerechos de acceso
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