Electron beam irradiation for the formation of thick Ag film on Ag3PO4
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comunitat-uji-handle2:10234/7013
comunitat-uji-handle3:10234/8638
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Title
Electron beam irradiation for the formation of thick Ag film on Ag3PO4Author (s)
Date
2020Publisher
Royal Society of ChemistryISSN
2046-2069Bibliographic citation
DA COSTA, João Paulo de Campos, et al. Electron beam irradiation for the formation of thick Ag film on Ag 3 PO 4. RSC Advances, 2020, vol. 10, núm. 37, p. 21745-21753Type
info:eu-repo/semantics/articleVersion
info:eu-repo/semantics/publishedVersionAbstract
This study demonstrates that the electron beam irradiation of materials, typically used in characterizationmeasurements, could be employed for advanced fabrication, modification, and functionalization ofcomposites. ... [+]
This study demonstrates that the electron beam irradiation of materials, typically used in characterizationmeasurements, could be employed for advanced fabrication, modification, and functionalization ofcomposites. We developed irradiation equipment using an electron beam irradiation source to beapplied in materials modification. Using this equipment, the formation of a thick Agfilm on the Ag3PO4semiconductor is carried out by electron beam irradiation for thefirst time. This is confirmed by variousexperimental techniques (X-ray diffraction,field-emission scanning electron microscopy, Ramanspectroscopy, and X-ray photoelectron spectroscopy) andab initiomolecular dynamics simulations. Ourcalculations demonstrate that, at the earlier stages, metallic Ag growth is initiated preferentially at the(110) surface, with the reduction of surface Ag cations forming metallic Ag clusters. As the (100) and (111)surfaces have smaller numbers of exposed Ag cations, the reductions on these surfaces are slower andare accompanied by the formation of O2molecules. [-]
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RSC Advances, 2020, vol. 10, núm. 37, p. 21745-21753Investigation project
The authors acknowledge thenancial support from Uni-versitat Jaume I by the project UJIB2016-25, GeneralitatValenciana (PrometeoII/2014/022, ACOMP/2014/270, and ACOMP/2015/1202), Ministerio de Econom ́ıa y Competitividad,Spain (project CTQ2015-65207-P); FAPESP (2019/18656-6, 2013/07296-2, 2016/23891-6), CNPq, and CAPES. The authors alsothank the computational resources of the Centro Nacional deProcessamento de Alto Desempenho em S ̃ao Paulo (CENAPAD-SP), Centro de Computaç ̃ao John David Rogers (CCJDR-UNICAMP), and CENAPAD-RJ (SDumont).Rights
info:eu-repo/semantics/openAccess
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