Optimizing Performance and Operational Stability of CsPbI3 Quantum-Dot-Based Light-Emitting Diodes by Interface Engineering
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Otros documentos de la autoría: muhammed, kunnummal; Hassanabadi, Ehsan; Masi, Sofia; Gualdrón Reyes, Andrés Fabián; Franckevicius, Marius; Devižis, Andrius; Gulbinas, Vidmantas; Fakharuddin, Azhar; Mora-Sero, Ivan
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INVESTIGACIONMetadatos
Título
Optimizing Performance and Operational Stability of CsPbI3 Quantum-Dot-Based Light-Emitting Diodes by Interface EngineeringAutoría
Fecha de publicación
2020-07Editor
American Chemical SocietyISSN
2637-6113Cita bibliográfica
K. M. Muhammed Salim, Ehsan Hassanabadi, Sofia Masi, Andrés. F. Gualdrón-Reyes, Marius Franckevicius, Andrius Devižis, Vidmantas Gulbinas, Azhar Fakharuddin, and Iván Mora-Seró.Optimizing Performance and Operational Stability of CsPbI3 Quantum-Dot-Based Light-Emitting Diodes by Interface Engineering. ACS Applied Electronic Materials 2020 2 (8), 2525-2534 DOI: 10.1021/acsaelm.0c00431Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://pubs.acs.org/doi/10.1021/acsaelm.0c00431#Versión
info:eu-repo/semantics/acceptedVersionPalabras clave / Materias
Resumen
Perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation display technology and lighting applications owing to their high current efficiency, low operating voltage, narrow ... [+]
Perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation display technology and lighting applications owing to their high current efficiency, low operating voltage, narrow spectral emission, and tunable emission color. Keys to achieving efficient PeLEDs are, besides an emitter layer with high optical quality, a negligible charge injection barrier between charge injecting layers (CILs) and an optimized thickness of these CILs for a controlled flow of charge carriers through the device. In this study, we systematically optimized hole transport layers and electron transport layers (ETLs) in PeLEDs employing CsPbI3 quantum dots as an emitter layer. We also investigated two bilayer cathodes (Liq/Ag and LiF/Al) with the various ETLs employed in our study and observed that 2,4,6-tris[3-(diphenylphosphinyl)phenyl]-1,3,5-triazine (PO-T2T) as an ETL improves the band alignment, leading to better electron injection. The improved electron/hole current balance results in ∼63% higher external quantum efficiency (EQE) in PO-T2T-based devices compared to PeLEDs employing other ETLs. In addition, we tracked the operational stability of the different devices observing a correlation with the EQE, where samples with higher EQE (PO-T2T-based devices) also present the highest stable operation at elevated current densities. [-]
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ACS Applied Electronic Materials 2020 2 (8)Proyecto de investigación
European Research Council (ERC) Consolidator Grant (724424-No-LIMIT); Generalitat Valenciana Prometeo Grant Q-Devices (Prometeo/2018/098); FWO international mobility grant (V424419N)Derechos de acceso
Copyright © American Chemical Society
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info:eu-repo/semantics/openAccess
http://rightsstatements.org/vocab/InC/1.0/
info:eu-repo/semantics/openAccess
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