Reversible Formation of Gold Halides in Single‐Crystal Hybrid‐Perovskite/Au Interface upon Biasing and Effect on Electronic Carrier Injection
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Otros documentos de la autoría: Pospisil, Jan; Guerrero, Antonio; Zmeskal, Oldrich; Weiter, Martin; Gallardo Bernal, Juan Jesus; Navas, Javier; Garcia-Belmonte, Germà
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Título
Reversible Formation of Gold Halides in Single‐Crystal Hybrid‐Perovskite/Au Interface upon Biasing and Effect on Electronic Carrier InjectionAutoría
Fecha de publicación
2019-08-08Editor
WileyISSN
1616-301X; 1616-3028Cita bibliográfica
Pospisil, J., Guerrero, A., Zmeskal, O., Weiter, M., Gallardo, J. J., Navas, J., Garcia‐Belmonte, G., Reversible Formation of Gold Halides in Single‐Crystal Hybrid‐Perovskite/Au Interface upon Biasing and Effect on Electronic Carrier Injection. Adv. Funct. Mater. 2019, 29, 1900881. https://doi.org/10.1002/adfm.201900881Tipo de documento
info:eu-repo/semantics/articleVersión de la editorial
https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201900881Versión
info:eu-repo/semantics/submittedVersionPalabras clave / Materias
Resumen
Solar cells, light emitting diodes, and X‐ray detectors based on perovskite materials often incorporate gold electrodes, either in direct or indirect contact with the perovskite compound. Chemical interactions between ... [+]
Solar cells, light emitting diodes, and X‐ray detectors based on perovskite materials often incorporate gold electrodes, either in direct or indirect contact with the perovskite compound. Chemical interactions between active layers and contacts deteriorate the operation and induce degradation, being the identification of the chemical nature of such interfacial structures an open question. Chemical reactivity of gold in contact with the perovskite semiconductor leads to reversible formation of oxidized gold halide species and explains the generation of halide vacancies in the vicinity of the interface. Electrical biasing induces contact reaction and produces modifications of the current level by favoring the ability of perovskite/Au interfaces to inject electronic carriers. The current injection increment does not depend on the halogen source used, either extrinsically by iodine vapor sublimation of Au electrodes, or intrinsically by bias‐driven migration of bromide ions. In addition, the formation of a dipole‐like structure at the reacted electrode that lowers the potential barrier for electronic carriers is confirmed. These findings highlight adequate selection of the external contacts and suggest the need for a deeper understanding of contact reactivity as it dominates the operation characteristics, rather than being governed by the bulk transport properties of the charge carriers, either electronic or ionic. [-]
Publicado en
Advanced Functional Materials, 2019, vol. 29, no 32Proyecto de investigación
Czech Science Foundation. Grant Number: 19‐23718S; MINECO of Spain. Grant Numbers: MAT2016‐76892‐C3‐1‐R, ENE2017‐90565‐REDTDerechos de acceso
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