Discerning recombination mechanisms and ideality factors through impedance analysis of high-efficiency perovskite solar cells
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Altres documents de l'autoria: Almora Rodríguez, Osbel; Taek Cho, Kyung; Aghazada, Sadig; Zimmermann, Iwan; Matt, Gebhard J.; Brabec, Christoph J.; Nazeeruddin, Mohammad Khaja; Garcia-Belmonte, Germà
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Títol
Discerning recombination mechanisms and ideality factors through impedance analysis of high-efficiency perovskite solar cellsAutoria
Data de publicació
2018Editor
ElsevierISSN
2211-2855Cita bibliogràfica
ALMORA, Osbel, et al. Discerning recombination mechanisms and ideality factors through impedance analysis of high-efficiency perovskite solar cells. Nano Energy, 2018, vol. 48, p. 63-72.Tipus de document
info:eu-repo/semantics/articleVersió de l'editorial
https://www.sciencedirect.com/science/article/pii/S2211285518301836Versió
info:eu-repo/semantics/submittedVersionParaules clau / Matèries
Resum
The ubiquitous hysteresis in the current-voltage characteristic of perovskite solar cells (PSCs) interferes in a
proper determination of the diode ideality factor (n), a key parameter commonly adopted to analyze ... [+]
The ubiquitous hysteresis in the current-voltage characteristic of perovskite solar cells (PSCs) interferes in a
proper determination of the diode ideality factor (n), a key parameter commonly adopted to analyze recombination mechanisms. An alternative way of determining n is by measuring the voltage variation of the ac
resistances in conditions of negligible steady-state dc currents. A reliable analysis of n based on the determination of the resistive response, free of hysteretic influences, reveals two separated voltage exponential dependences using different perovskite absorbers (3D perovskites layer based on CH3NH3PbI3 or mixed
Cs0.1FA0.74MA0.13PbI2.48Br0.39) and a variety of interlayers (2D perovskite thin capping). The dominant resistive
element always exhibits an exponential dependence with factor n ≈ 2, irrespective of the type of perovskite and
capping layers. In addition, a non-negligible resistive mechanism occurs at low-frequencies (with voltage-independent time constant ~ 1 s) which is related to the kinetic properties of the outer interfaces, with varying
ideality factor (n = 2 for CH3NH3PbI3, and n = 1.5 for Cs0.1FA0.74MA0.13PbI2.48Br0.39). Our work identifies
common features in the carrier recombination mechanisms among different types of high-efficiency PSCs, and
simultaneously signals particularities on specific architectures, mostly in the carrier dynamics at outer interfaces [-]
Publicat a
Nano Energy, 2018, vol. 48.Proyecto de investigación
MAT2016-76892- C3-3-R ; GRISOLIA/2014/035 ; 407040_154056 ; N1: 643791Drets d'accés
2211-2855/ © 2018 Elsevier Ltd. All rights reserved.
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